Reaction layer dynamics in ion-assisted Si/XeF2etching: Temperature dependence

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Ion-assisted Si/XeF2 etching: Temperature dependence in the range 100-1000 K

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ژورنال

عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

سال: 2000

ISSN: 0734-2101,1520-8559

DOI: 10.1116/1.1316102