Reaction layer dynamics in ion-assisted Si/XeF2etching: Temperature dependence
نویسندگان
چکیده
منابع مشابه
Ion-assisted Si/XeF2 etching: Temperature dependence in the range 100-1000 K
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملTemperature and Pressure Dependence of the Reaction
Experimental data for the unimolecular decomposition of CS2 from the literature are analyzed by unimolecular rate theory with the goal of obtaining rate constants for the reverse reaction S + CS (+M) → CS2 (+M) over wide temperature and pressure ranges. The results constitute an important input for the kinetic modeling of CS2 oxidation. CS2 dissociation proceeds as a spin-forbidden process whos...
متن کاملTemperature dependence of fast dynamics in proteins.
The temperature dependence of the internal dynamics of recombinant human ubiquitin has been measured using solution NMR relaxation techniques. Nitrogen-15 relaxation has been employed to obtain a measure of the amplitude of subnanosecond motion at amide N-H sites in the protein. Deuterium relaxation has been used to obtain a measure of the amplitude of motion of methyl-groups in amino-acid side...
متن کاملMolecular dynamics simulation of interaction of Melittin and DMPC bilayer: Temperature dependence
The interaction between proteins and membranes has an important role in biological pro-cesses.We have calculated energies of interaction between Melittin and DMPC bilayer in differenttemperatures. We have used the CHARMM software for MD simulation under the canonical (N,V, E) ensemble at different temperatures. The computations have shown that water moleculeshave more penetration into the bilay...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2000
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.1316102